PART |
Description |
Maker |
STP11NM60A STP11NM60AFP STB11NM60A-1 |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh⑩Power MOSFET N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmeshPower MOSFET N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh?Power MOSFET
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意法半导 STMICROELECTRONICS[STMicroelectronics]
|
AOT11N60 |
600V,11A N-Channel MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
STB11NM60A-1 STP11NM50AFP STP11NM60A STP11NM60AFP |
N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET
|
ST Microelectronics
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RFP3055LE RFD3055LESM RFD3055LE FN4044 RFD3055LESM |
11A/ 60V/ 0.107 Ohm/ Logic Level/ N-Channel Power MOSFETs TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 11A I(D) | TO-252AA 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs 11A 60V 0.107 Ohm Logic Level N-Channel Power MOSFETs From old datasheet system
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INTERSIL[Intersil Corporation]
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AOT11S60 |
600V 11A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
RFSP5032RS32Q1 RFSP5032RS32P0 |
5 GHz 802.11a WLAN Power Amplifier 5频段802.11a WLAN功率放大
|
ANADIGICS, Inc.
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SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 600V N-Channel B-FET / Substitute of SSI4N60A 600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics STMicroelectronics 意法半导
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
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ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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FQU1N60C FQD1N60C FQD1N60CTF FQD1N60CTM FQU1N60CTU |
600V N-Channel Advance QFET C-Series 600V N-Channel MOSFET From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
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